Two Efficient Ternary Adder Designs Based On CNFET Technology

Document Type : Original Article

Authors

1 Computer engineering department, Amirkabir university of technology, Gramsar campus, Garmsar, Iran

2 Computer engineering department, Amirkabir university of technology, Garmsar campus, Garmsar, Iran

Abstract

Full adder is one of the essential circuits among the various processing elements used in VLSI and other technologies circuits, because they are mainly employed in other arithmetic circuits, such as multi-digit adders, subtractors, and multipliers. This paper proposes two efficient ternary full adders based on Carbon Nanotube Field-Effect Transistor (CNFET) technology. Using the adjustable nanotube diameter in CNFETs, these adders utilize arbitrary threshold voltages so that arithmetic operations can be performed with a radix of 3. For performance analysis, the proposed adder circuits are simulated in HSPICE with 32nm CNFET technology. In these simulations, different inputs are applied at different frequencies with different load capacitances placed at the output. Simulation results have shown that the proposed adders not only improve the speed, power consumption, and Power Delay Product (PDP) of the existing state-of-the-art designs but also improve the design complexity by reducing the number of transistors contained within the circuit.

Keywords

Main Subjects


[1] S. Bala and M. Khosla, "Electrostatically doped tunnel CNTFET model for low-power VLSI circuit design," Journal of Computational Electronics, vol. 17, pp. 1528-1535, 2018.
[2] S. Satyanarayana, S. R. Shailendra, V. Ramakrishnan, and S. Sriadibhatla, "Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance," Journal of Computational Electronics, vol. 18, pp. 1045-1054, 2019.
[3] M. H. Moaiyeri, R. F. Mirzaee, K. Navi, and O. Hashemipour, "Efficient CNTFET-based ternary full adder cells for nanoelectronics," Nano-Micro Letters, vol. 3, pp. 43-50, 2011.
[4] G. Deng and C. Chen, "Hybrid CMOS-SET arithmetic circuit design using Coulomb blockade oscillation characteristic," Journal of Computational and Theoretical Nanoscience, vol. 8, pp. 1520-1526, 2011.
[5] F. Farzaneh, R. F. Mirzaee, and K. Navi, "A novel 3D three/five-input majority-based full adder in nanomagnetic logic," Journal of Computational Electronics, vol. 18, pp. 364-373, 2019.
[6] P. Kumar and S. Singh, "Optimization of the area efficiency and robustness of a QCA-based reversible full adder," Journal of Computational Electronics, vol. 18, pp. 1478-1489, 2019.
[7] N. Maity, R. Maity, S. Maity, and S. Baishya, "Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation," Journal of Computational Electronics, vol. 18, pp. 492-499, 2019.
[8] S. S. Ensan, M. H. Moaiyeri, B. Ebrahimi, S. Hessabi, and A. Afzali-Kusha, "A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology," Journal of Computational Electronics, vol. 18, pp. 519-526, 2019.
[9] S. Lin, Y.-B. Kim, and F. Lombardi, "CNTFET-based design of ternary logic gates and arithmetic circuits," IEEE transactions on nanotechnology, vol. 10, pp. 217-225, 2009.
[10] F. Sharifi, A. Panahi, M. H. Moaiyeri, H. Sharifi, and K. Navi, "High performance CNFET-based ternary full adders," IETE Journal of Research, vol. 64, pp. 108-115, 2018.
[11] F. Sharifi, M. H. Moaiyeri, K. Navi, and N. Bagherzadeh, "Quaternary full adder cells based on carbon nanotube FETs," Journal of Computational Electronics, vol. 14, pp. 762-772, 2015.
[12] M. D. Gavaber, M. Poorhosseini, and S. Pourmozafari, "Novel architecture for low-power CNTFET-based compressors," Journal of Circuits, Systems and Computers, vol.28, no. 12, pp. 195-207, 2019.
[13] M. Maleknejad, S. Mohammadi, S. M. Mirhosseini, K. Navi, H. R. Naji, and M. Hosseinzadeh, "A low-power high-speed hybrid multi-threshold full adder design in CNFET technology," Journal of Computational Electronics, vol. 17, pp. 1257-1267, 2018.
[14] E. Shahrom and S. A. Hosseini, "A new low power multiplexer based ternary multiplier using CNTFETs," AEU-International Journal of Electronics and Communications, vol. 93, pp. 191-207, 2018.
[15] M. D. Gavaber, K. M. Kalantari, and S. Pourmozafari, "Design of High Speed and low power D Flip-Flop by CNTFET Technology," 3rd International Conference on Knowledge Engineering and Innovation, Tehran, Iran, 2016.
[16] A. Karimi, A. Rezai, and M. M. Hajhashemkhani, "Ultra-Low Power Pulse-Triggered CNTFET-Based Flip-Flop," IEEE Transactions on Nanotechnology, vol. 18, pp. 756-761, 2019.
[17] G. S. Kumar, A. Singh, and B. Raj, "Design and analysis of a gate-all-around CNTFET-based SRAM cell," Journal of Computational Electronics, vol. 17, pp. 138-145, 2018.
[18] P. K. Patel, M. Malik, and T. K. Gupta, "Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage region," Journal of Computational Electronics, vol. 17, pp. 774-783, 2018.
[19] P. Keshavarzian and R. Sarikhani, "A novel CNTFET-based ternary full adder," Circuits, Systems, and Signal Processing, vol. 33, pp. 665-679, 2014.
[20] B. Srinivasu and K. Sridharan, "Carbon nanotube FET-based low-delay and low-power multi-digit adder designs," IET Circuits, Devices & Systems, vol. 11, pp. 352-364, 2016.
[21] K. Sridharan, S. Gurindagunta, and V. Pudi, "Efficient multiternary digit adder design in CNTFET technology," IEEE transactions on Nanotechnology, vol. 12, pp. 283-287, 2013.
[22] M. H. Moaiyeri, M. Nasiri, and N. Khastoo, "An efficient ternary serial adder based on carbon nanotube FETs," Engineering Science and Technology, an International Journal, vol. 19, pp. 271-278, 2016.
[23] A. Dhande and V. Ingole, "Design and implementation of 2 bit ternary ALU slice," Proc. Int. Conf. IEEE-Sci. Electron., Technol. Inf. Telecommun, pp. 17-21, 2005.
[24] S. L. Hurst, "Multiple-valued logic? its status and its future," IEEE transactions on Computers, vol. 33, pp. 1160-1179, 1984.
[25] S. K. Sahoo, G. Akhilesh, R. Sahoo, and M. Muglikar, "High-performance ternary adder using CNTFET," IEEE Transactions on Nanotechnology, vol. 16, pp. 368-374, 2017.
[26] M. H. Moaiyeri, A. Doostaregan, and K. Navi, "Design of energy-efficient and robust ternary circuits for nanotechnology," IET Circuits, Devices & Systems, vol. 5, pp. 285-296, 2011.
[27] J. Deng and H.-S. P. Wong, "A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part II: Full device model and circuit performance benchmarking," IEEE Transactions on Electron Devices, vol. 54, pp. 3195-3205, 2007.
CAPTCHA Image