[1] S. Bala and M. Khosla, "Electrostatically doped tunnel CNTFET model for low-power VLSI circuit design," Journal of Computational Electronics, vol. 17, pp. 1528-1535, 2018.
[2] S. Satyanarayana, S. R. Shailendra, V. Ramakrishnan, and S. Sriadibhatla, "Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance," Journal of Computational Electronics, vol. 18, pp. 1045-1054, 2019.
[3] M. H. Moaiyeri, R. F. Mirzaee, K. Navi, and O. Hashemipour, "Efficient CNTFET-based ternary full adder cells for nanoelectronics," Nano-Micro Letters, vol. 3, pp. 43-50, 2011.
[4] G. Deng and C. Chen, "Hybrid CMOS-SET arithmetic circuit design using Coulomb blockade oscillation characteristic," Journal of Computational and Theoretical Nanoscience, vol. 8, pp. 1520-1526, 2011.
[5] F. Farzaneh, R. F. Mirzaee, and K. Navi, "A novel 3D three/five-input majority-based full adder in nanomagnetic logic," Journal of Computational Electronics, vol. 18, pp. 364-373, 2019.
[6] P. Kumar and S. Singh, "Optimization of the area efficiency and robustness of a QCA-based reversible full adder," Journal of Computational Electronics, vol. 18, pp. 1478-1489, 2019.
[7] N. Maity, R. Maity, S. Maity, and S. Baishya, "Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation," Journal of Computational Electronics, vol. 18, pp. 492-499, 2019.
[8] S. S. Ensan, M. H. Moaiyeri, B. Ebrahimi, S. Hessabi, and A. Afzali-Kusha, "A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology," Journal of Computational Electronics, vol. 18, pp. 519-526, 2019.
[9] S. Lin, Y.-B. Kim, and F. Lombardi, "CNTFET-based design of ternary logic gates and arithmetic circuits," IEEE transactions on nanotechnology, vol. 10, pp. 217-225, 2009.
[10] F. Sharifi, A. Panahi, M. H. Moaiyeri, H. Sharifi, and K. Navi, "High performance CNFET-based ternary full adders," IETE Journal of Research, vol. 64, pp. 108-115, 2018.
[11] F. Sharifi, M. H. Moaiyeri, K. Navi, and N. Bagherzadeh, "Quaternary full adder cells based on carbon nanotube FETs," Journal of Computational Electronics, vol. 14, pp. 762-772, 2015.
[12] M. D. Gavaber, M. Poorhosseini, and S. Pourmozafari, "Novel architecture for low-power CNTFET-based compressors," Journal of Circuits, Systems and Computers, vol.28, no. 12, pp. 195-207, 2019.
[13] M. Maleknejad, S. Mohammadi, S. M. Mirhosseini, K. Navi, H. R. Naji, and M. Hosseinzadeh, "A low-power high-speed hybrid multi-threshold full adder design in CNFET technology," Journal of Computational Electronics, vol. 17, pp. 1257-1267, 2018.
[14] E. Shahrom and S. A. Hosseini, "A new low power multiplexer based ternary multiplier using CNTFETs," AEU-International Journal of Electronics and Communications, vol. 93, pp. 191-207, 2018.
[15] M. D. Gavaber, K. M. Kalantari, and S. Pourmozafari, "Design of High Speed and low power D Flip-Flop by CNTFET Technology," 3rd International Conference on Knowledge Engineering and Innovation, Tehran, Iran, 2016.
[16] A. Karimi, A. Rezai, and M. M. Hajhashemkhani, "Ultra-Low Power Pulse-Triggered CNTFET-Based Flip-Flop," IEEE Transactions on Nanotechnology, vol. 18, pp. 756-761, 2019.
[17] G. S. Kumar, A. Singh, and B. Raj, "Design and analysis of a gate-all-around CNTFET-based SRAM cell," Journal of Computational Electronics, vol. 17, pp. 138-145, 2018.
[18] P. K. Patel, M. Malik, and T. K. Gupta, "Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage region," Journal of Computational Electronics, vol. 17, pp. 774-783, 2018.
[19] P. Keshavarzian and R. Sarikhani, "A novel CNTFET-based ternary full adder," Circuits, Systems, and Signal Processing, vol. 33, pp. 665-679, 2014.
[20] B. Srinivasu and K. Sridharan, "Carbon nanotube FET-based low-delay and low-power multi-digit adder designs," IET Circuits, Devices & Systems, vol. 11, pp. 352-364, 2016.
[21] K. Sridharan, S. Gurindagunta, and V. Pudi, "Efficient multiternary digit adder design in CNTFET technology," IEEE transactions on Nanotechnology, vol. 12, pp. 283-287, 2013.
[22] M. H. Moaiyeri, M. Nasiri, and N. Khastoo, "An efficient ternary serial adder based on carbon nanotube FETs," Engineering Science and Technology, an International Journal, vol. 19, pp. 271-278, 2016.
[23] A. Dhande and V. Ingole, "Design and implementation of 2 bit ternary ALU slice," Proc. Int. Conf. IEEE-Sci. Electron., Technol. Inf. Telecommun, pp. 17-21, 2005.
[24] S. L. Hurst, "Multiple-valued logic? its status and its future," IEEE transactions on Computers, vol. 33, pp. 1160-1179, 1984.
[25] S. K. Sahoo, G. Akhilesh, R. Sahoo, and M. Muglikar, "High-performance ternary adder using CNTFET," IEEE Transactions on Nanotechnology, vol. 16, pp. 368-374, 2017.
[26] M. H. Moaiyeri, A. Doostaregan, and K. Navi, "Design of energy-efficient and robust ternary circuits for nanotechnology," IET Circuits, Devices & Systems, vol. 5, pp. 285-296, 2011.
[27] J. Deng and H.-S. P. Wong, "A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part II: Full device model and circuit performance benchmarking," IEEE Transactions on Electron Devices, vol. 54, pp. 3195-3205, 2007.
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